Benefits of Using Silicon Carbide in Power Electronics

30 Apr
2019

 
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When it comes to the benefits of using SiC in power electronics, they are numerous indeed. Being able to hold out considerably higher voltages in distinct semiconductors, Silicon carbide material, unlike typical silicon, can brook up to ten times higher energy. Along with helping in easing up probable complexities, it reduces system cost as well.

SiC diode can cart around five times higher currents than that of those which are made of silicon. Just like SiC MOSFETs, this allows for fewer components to be used in the system, thus greatly reducing costs and complexity. A semiconductor, ensued by the blend of carbon and silicon, silicon carbide exhibits a level of hardness that is almost correspondent to a diamond. It also allows SiC semiconductors to work in extreme conditions.

Silicon carbide diodes and MOSFETs can operate at much higher temperatures than common silicon. Silicon power units can only work efficiently up to 150°C. On the contrary, SiC can function at temperatures that reach 200°C and even above the temperature; however, most commercially available components are still esteemed at 175°C. This paves the way for lower cooling costs as well as less complexity.

Distinct semiconductors made with SiC will have a higher energy posse gap, which would happen to offer more strength and defiance against high temperature, diffusion, and/or acute electromagnetic fields. It has been found to be quite suitable in martial as well as photoconductive applications. The fact that it permits electronic equipment to function at prime efficiency makes its usage pretty frequent in many important military systems.

Also, having a three times higher thermal dynamism than silicon, the heat gets regulated from the SiC MOSFETs at the required level, thereby curtailing down size, price and the intricacy of the cooling systems. This way, electronic power gadgets can be powered up around ten times faster than that of those made of silicon. This, in turn, leads to significantly smaller storage throttles and circuits, initiating more efficient, cost-effective, and smaller systems. Moreover, Silicon carbide doles out a plethora of benefits for engineers depicting power systems as well.

According to Allied Market Research, the global market of silicon carbide power semiconductor is expected to grow at a significant CAGR from 2018 to 2025. Advantages of compound semiconductors (SiC) over silicon-based technology, surge in demand of power electronics modules across various industry verticals, rise in installation of solar photovoltaic panels for electricity generation, and growth in demand of electric vehicles, plug-in electric vehicles, and hybrid electric vehicles have fueled the growth. On the other hand, high wafer cost of silicon carbide semiconductors, complexity in supply chain and designing process of SiC semiconductor technology have checked the growth to some extent. However, advent of 5G mobile communication has almost downplayed the factor and created multiple opportunities in the segment.

To conclude, it can be stated that the global silicon carbide power semiconductor market is growing quite rapidly and in the next few years to come, it’s going to give its contenders a tough competition indeed.

 
Alex Hillsberg

Alex Hillsberg

Chief editor of review team at FinancesOnline

Chief editor of review team at FinancesOnline Alex Hillsberg is an expert in the area of B2B and SaaS related products. He has worked for several B2B startups in the past and gathered a lot of first hand knowledge about the industry during that time.

 
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